The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2019
Filed:
Jul. 17, 2018
United Microelectronics Corp., Hsinchu, TW;
Chih-Haw Lee, Hsinchu County, TW;
Tzu-Ping Chen, Hsinchu County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for fabricating semiconductor device includes providing a substrate having a first device region and a second device region. Floating gate structure is formed in the first device region. Liner layer and nitride layer are sequentially deposited over the first device region and the second device region. The floating gate structure is conformally covered. Etching back process is performed on the nitride layer to reduce thickness of the nitride layer. The first device region is still covered by the nitride layer. A photomask layer is formed over the substrate with an opening region to expose the second device region for cleaning. The photomask layer is removed. A gate oxide layer grows on the substrate in the second device region. Anisotropic etching process is performed to remove the nitride layer, resulting in a nitride spacer on a lower portion of a sidewall of the floating gate structure.