The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2019
Filed:
Dec. 17, 2018
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 29/66 (2006.01); H01L 21/308 (2006.01); H01L 21/31 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 27/108 (2006.01); H01L 29/417 (2006.01); H01L 27/092 (2006.01); H01L 21/306 (2006.01); H01L 21/8234 (2006.01); H01L 21/467 (2006.01); H01L 21/302 (2006.01); H01L 21/8238 (2006.01); H01L 21/461 (2006.01); H01L 21/84 (2006.01); H01L 21/465 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6681 (2013.01); H01L 21/302 (2013.01); H01L 21/306 (2013.01); H01L 21/308 (2013.01); H01L 21/3081 (2013.01); H01L 21/31 (2013.01); H01L 21/3213 (2013.01); H01L 21/461 (2013.01); H01L 21/465 (2013.01); H01L 21/467 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 27/0924 (2013.01); H01L 27/10879 (2013.01); H01L 29/0649 (2013.01); H01L 29/0657 (2013.01); H01L 29/41791 (2013.01); H01L 29/66545 (2013.01); H01L 29/66666 (2013.01); H01L 29/66772 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/786 (2013.01); H01L 29/7831 (2013.01); H01L 29/7853 (2013.01);
Abstract
A semiconductor device includes a substrate, at least one active semiconductor fin, at least one first dummy semiconductor fin, and at least one second dummy semiconductor fin. The active semiconductor fin is disposed on the substrate. The first dummy semiconductor fin is disposed on the substrate. The second dummy semiconductor fin is disposed on the substrate and between the active semiconductor fin and the first dummy semiconductor fin. A top surface of the first dummy semiconductor fin and a top surface of the second dummy semiconductor fin are curved in different directions.