The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2019

Filed:

Nov. 09, 2017
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Jei-Cheng Huang, New Taipei, TW;

Jhen-Yu Tsai, Kaohsiung, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4238 (2013.01); H01L 27/0207 (2013.01); H01L 29/78 (2013.01);
Abstract

The present disclosure provides a transistor device and a semiconductor layout structure. The transistor device includes a substrate including at least one active region, an isolation structure surrounding the active region, a gate structure disposed over the substrate, and a source/drain region disposed at two opposite sides of the gate structure. The gate structure includes a first portion extending along a first direction and a second portion extending along a second direction perpendicular to the first direction. The first portion of the gate structure overlaps a first boundary between the active region and the isolation structure.


Find Patent Forward Citations

Loading…