The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2019
Filed:
Sep. 25, 2015
Intel Corporation, Santa Clara, CA (US);
Aaron D. Lilak, Beaverton, OR (US);
Uygar E. Avci, Portland, OR (US);
David L. Kencke, Beaverton, OR (US);
Patrick Morrow, Portland, OR (US);
Kerryann Foley, Portland, OR (US);
Stephen M. Cea, Hillsboro, OR (US);
Rishabh Mehandru, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Techniques and mechanisms to provide insulation for a component of an integrated circuit device. In an embodiment, structures of a circuit component are formed in or on a first side of a semiconductor substrate, the structures including a first doped region, a second doped region and a third region between the first doped region and the second doped region. The substrate has formed therein an insulation structure, proximate to the circuit component structures, which is laterally constrained to extend only partially from a location under the circuit component toward an edge of the substrate. In another embodiment, a second side of the substrate—opposite the first side—is exposed by thinning to form the substrate from a wafer. Such thinning enables subsequent back side processing to form a recess in the second side, and to deposit the insulation structure in the recess.