The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2019
Filed:
Feb. 27, 2018
Applicant:
Napra Co., Ltd., Katsushika-Ku, Tokyo, JP;
Inventor:
Shigenobu Sekine, Tokyo, JP;
Assignee:
Napra Co., Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/29 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 24/85 (2013.01); H01L 21/56 (2013.01); H01L 23/293 (2013.01); H01L 23/295 (2013.01); H01L 23/3107 (2013.01); H01L 23/3135 (2013.01); H01L 24/48 (2013.01); H01L 24/05 (2013.01); H01L 24/32 (2013.01); H01L 24/45 (2013.01); H01L 24/73 (2013.01); H01L 24/78 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48011 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/78301 (2013.01); H01L 2224/85007 (2013.01); H01L 2224/85035 (2013.01); H01L 2224/85045 (2013.01); H01L 2224/85047 (2013.01); H01L 2224/8592 (2013.01); H01L 2224/85181 (2013.01); H01L 2224/85205 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/1576 (2013.01); H01L 2924/15747 (2013.01); H01L 2924/181 (2013.01);
Abstract
Disclosed is a semiconductor device that includes a semiconductor chip; bonding pads provided to the semiconductor chip; a plurality of lead terminals arranged around the semiconductor chip; a plurality of bonding wires that electrically connect the semiconductor chip with the plurality of lead terminals; and a resin encapsulant which encapsulates the semiconductor chip and the bonding wires, the semiconductor device further having an insulating material interposed at the interface between the bonding wires and the resin encapsulant, and the insulating material containing a nanometer-sized insulating particle and amorphous silica.