The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2019

Filed:

Sep. 27, 2017
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Andrew Joseph Kelly, Hsinchu County, TW;

Yusuke Oniki, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/67 (2006.01); H01L 21/3063 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); C25D 17/00 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67086 (2013.01); C25D 17/00 (2013.01); H01L 21/02233 (2013.01); H01L 21/02258 (2013.01); H01L 21/28158 (2013.01); H01L 21/3063 (2013.01); H01L 21/30635 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66795 (2013.01); H01L 21/02236 (2013.01); H01L 21/02238 (2013.01); H01L 21/02241 (2013.01); H01L 29/0673 (2013.01); H01L 29/513 (2013.01); H01L 29/665 (2013.01); H01L 29/7853 (2013.01);
Abstract

A method includes holding a semiconductor substrate by a substrate holder of an electrochemical apparatus. The electrochemical apparatus includes a reaction cell and a counter electrode, and the semiconductor substrate has an exposed surface containing germanium, silicon, silicon germanium or any of III-V elements. The exposed surface of the semiconductor substrate is immersed in an electrolyte bath in the reaction cell. A portion of the semiconductor substrate is removed by supplying a first current to the counter electrode and a second current to the semiconductor substrate. The second current has a negative bias. The negative bias is smaller than 0V and equal to or larger than minus 5V.


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