The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2019

Filed:

Apr. 15, 2019
Applicant:

Guangdong University of Technology, Guangzhou, Guangdong, CN;

Inventors:

Xin Chen, Guangdong, CN;

Yun Chen, Guangdong, CN;

Dachuang Shi, Guangdong, CN;

Xun Chen, Guangdong, CN;

Qiang Liu, Guangdong, CN;

Jian Gao, Guangdong, CN;

Chengqiang Cui, Guangdong, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0216 (2014.01); B81C 1/00 (2006.01); H01L 21/308 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3085 (2013.01); H01L 21/30604 (2013.01);
Abstract

A method for synchronous wet etching processing of differential microstructures, including the following steps: step a: performing photoetching on a processing surface of a workpiece to be processed to develop the workpiece; step b: affixing a mask to a surface opposite to the processing surface of the workpiece; step c: continuously cooling the mask; step d: placing the cooled mask and the workpiece in a wet etching device; and adding an etchant to the processing surface of the workpiece to start etching; step e: removing the mask and the workpiece from the wet etching device after the set etching time; separating the mask and the workpiece to obtain a workpiece with a etching structure. A temperature difference is formed between the pattern area to be processed and the retaining area.


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