The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2019
Filed:
Jan. 15, 2018
Applicant:
Korea Institute of Science and Technology, Seoul, KR;
Inventors:
Assignee:
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY, Seongbuk-Gu, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/11 (2006.01); H01S 3/08 (2006.01); C30B 29/02 (2006.01); H01S 3/083 (2006.01); H01S 3/00 (2006.01); C30B 25/10 (2006.01); G02F 1/01 (2006.01); G02F 1/35 (2006.01); H01S 3/23 (2006.01);
U.S. Cl.
CPC ...
H01S 3/1115 (2013.01); C30B 25/105 (2013.01); C30B 29/02 (2013.01); G02F 1/0118 (2013.01); G02F 1/3536 (2013.01); H01S 3/0092 (2013.01); H01S 3/083 (2013.01); H01S 3/08013 (2013.01); H01S 3/08054 (2013.01); H01S 3/0078 (2013.01); H01S 3/2391 (2013.01);
Abstract
A method for in situ synthesis of graphene along a lengthwise direction of a waveguide applied to a photonic device includes processing an evanescent field of laser propagating in the waveguide to spread outward the waveguide, depositing a nickel thin film on a surface of the waveguide, growing graphene between a surface of the waveguide and a nickel thin film by irradiating telecommunication laser to a core of the waveguide, and removing the nickel thin film from the waveguide. Accordingly, graphene with high optical nonlinearity is in situ synthesized in the photonic device.