The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2019

Filed:

Jan. 29, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Tsai-Feng Yang, Hualien County, TW;

Chih-Heng Shen, Hsinchu County, TW;

Chun-Yi Yang, Hsinchu, TW;

Kun-Ming Huang, Taipei, TW;

Po-Tao Chu, New Taipei, TW;

Shen-Ping Wang, Keelung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 27/02 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7823 (2013.01); H01L 29/0623 (2013.01); H01L 29/0692 (2013.01); H01L 29/0696 (2013.01); H01L 29/0869 (2013.01); H01L 29/0878 (2013.01); H01L 29/0886 (2013.01); H01L 29/1083 (2013.01); H01L 29/41758 (2013.01); H01L 29/41766 (2013.01); H01L 29/66681 (2013.01); H01L 29/66696 (2013.01); H01L 29/7816 (2013.01); H01L 29/7824 (2013.01); H01L 27/0266 (2013.01); H01L 29/42368 (2013.01);
Abstract

A device having a drain region with a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The semiconductor device also comprises a source region spaced from and surrounding the drain region in the first layer.


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