The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2019
Filed:
Oct. 07, 2016
Applicant:
Analog Devices Global, Hamilton, BM;
Inventors:
Patrick F. M. Poucher, Raheen, IE;
Padraig L. Fitzgerald, Mallow, IE;
John Jude O'Donnell, Quin, IE;
Oliver J. Kierse, Killaloe, IE;
Denis M. O'Connor, Banteer, IE;
Assignee:
Analog Devices Global, Hamilton, BM;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/12 (2006.01); H01L 29/06 (2006.01); H01L 21/764 (2006.01); H01L 23/00 (2006.01); H01L 23/16 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/764 (2013.01); H01L 23/16 (2013.01); H01L 23/3135 (2013.01); H01L 23/3178 (2013.01); H01L 23/562 (2013.01); H01L 2924/0002 (2013.01);
Abstract
An integrated circuit may include a semiconductor die having a trench formed in a surface of the semiconductor die. One or more circuit components may be formed on the surface of the semiconductor die. The trench can extend into the semiconductor die next to at least one circuit component. The trench may surround the circuit component partially or wholly. The trench may be filled with a material having a lower bulk modulus than the semiconductor die in which the trench is formed.