The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2019
Filed:
Apr. 16, 2018
Applicant:
Japan Display Inc., Tokyo, JP;
Inventors:
Toshinari Sasaki, Tokyo, JP;
Marina Shiokawa, Tokyo, JP;
Assignee:
Japan Display Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); H01L 27/127 (2013.01); H01L 27/1251 (2013.01); H01L 27/1255 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78633 (2013.01);
Abstract
A semiconductor device including a substrate, a first insulating layer above the substrate, a first transistor including a first oxide semiconductor layer above the first insulating layer, and a second transistor including a second oxide semiconductor layer above the first insulating layer, a composition of the second oxide semiconductor layer being different from a composition of the first oxide semiconductor layer.