The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2019

Filed:

Dec. 20, 2017
Applicants:

Industrial Technology Research Institute, Hsinchu, TW;

Intellectual Property Innovation Corporation, Hsinchu, TW;

Inventors:

Shu-Wei Kuo, Hsinchu County, TW;

Wei-Yuan Cheng, Hsinchu County, TW;

Chen-Tsai Yang, Taoyuan, TW;

Jie-Mo Lin, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 23/14 (2006.01); H01L 23/15 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5389 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 23/145 (2013.01); H01L 23/15 (2013.01); H01L 23/3114 (2013.01); H01L 23/49822 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 23/562 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 23/3121 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/214 (2013.01); H01L 2924/35121 (2013.01); H01L 2924/381 (2013.01);
Abstract

A semiconductor package structure includes a redistribution structure, a chip, an upper dielectric layer, a plurality of conductive members and an encapsulation layer. The redistribution structure includes a redistribution layer and a first dielectric layer disposed on the redistribution layer. The upper dielectric layer is disposed between the chip and the first dielectric layer of the redistribution structure, wherein the upper dielectric layer and the first dielectric layer are organic materials. A plurality of conductive members is disposed between the redistribution layer and the chip. Each conductive member has a first end adjacent to the chip and a second end adjacent to the redistribution structure, wherein the first end of said each conductive member contacts with the upper dielectric layer and the second end of said each conductive member contacts with the first dielectric layer.


Find Patent Forward Citations

Loading…