The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2019
Filed:
Jun. 30, 2017
United Microelectronics Corp., Hsinchu, TW;
Hsu Ting, Tainan, TW;
Kuang-Hsiu Chen, Tainan, TW;
Chun-Wei Yu, Tainan, TW;
Keng-Jen Lin, Kaohsiung, TW;
Yu-Ren Wang, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for processing a semiconductor device is provided. The semiconductor device includes a protruding structure on a substrate, the protruding structure having a nitride spacer at a sidewall, and an epitaxial layer is formed in the substrate adjacent to the protruding structure. The method includes removing the nitride spacer on the protruding structure. Then, a dilute hydrofluoric (DHF) cleaning process is performed over the substrate, wherein a top surficial portion of the epitaxial layer is removed. A standard clean (SC) process is performed over the substrate, wherein a native oxide layer is formed on an expose surface of the epitaxial layer.