The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2019

Filed:

Oct. 25, 2017
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Ya-Jui Lee, Taichung, TW;

Kuan-Fu Chen, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/08 (2006.01); G11C 16/24 (2006.01); G11C 16/12 (2006.01); G11C 16/14 (2006.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01); G11C 16/12 (2013.01); G11C 16/14 (2013.01); G11C 16/24 (2013.01);
Abstract

Provided is an operation method for a memory device. The memory device includes a memory array having a plurality of word lines and a plurality of bit lines. The operation method for the memory device includes: applying a program voltage to at least one selected word line of the word lines; and during a high level of the program voltage, based on respective locations of a plurality of selected bit line, which are to be written into data 0, on the word lines, applying different plurality of bit line voltages to the selected bit line which are to be written into data 0.


Find Patent Forward Citations

Lee, Ya-Jui. (2019). Memory device and programming operation method thereof with different bit line voltages (U.S. Patent No. 10460808). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10460808

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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