The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2019

Filed:

Mar. 14, 2018
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Yuan-Sheng Lin, Taoyuan, TW;

Weng-Yi Chen, Zhubei, TW;

Kuan-Yu Wang, New Taipei, TW;

Chih-Wei Liu, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); B81B 3/00 (2006.01); H04R 19/00 (2006.01); H04R 19/04 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0075 (2013.01); B81C 1/00158 (2013.01); B81C 1/00785 (2013.01); H04R 19/005 (2013.01); H04R 19/04 (2013.01); B81B 2201/0257 (2013.01); B81B 2207/115 (2013.01); H04R 2201/003 (2013.01); H04R 2307/027 (2013.01);
Abstract

A micro-electro-mechanical (MEMS) structure and a method for forming the same are disclosed. The MEMS structure includes a sacrificial layer, a lower dielectric film, an upper dielectric film, a plurality of through holes and a protective film. The sacrificial layer comprises an opening. The lower dielectric film is on the sacrificial layer. The upper dielectric film is on the lower dielectric film. The plurality of through holes passes through the lower dielectric film and the upper dielectric film. The protective film covers side walls of the upper dielectric film and the lower dielectric film and a film interface between the lower dielectric film and the upper dielectric film.


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