The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2019

Filed:

Sep. 17, 2014
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Kevin J. Lee, Beaverton, OR (US);

Ruchir Saraswat, Swindon, GB;

Uwe Zillmann, Braunschweig, DE;

Valluri Bob Rao, Saratoga, CA (US);

Tor Lund-Larsen, Braunschweig, DE;

Nicholas P. Cowley, Wroughton, GB;

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04R 19/04 (2006.01); H04R 1/04 (2006.01); B81B 7/02 (2006.01); H01L 23/00 (2006.01); H01L 21/683 (2006.01); H01L 23/48 (2006.01); B81C 1/00 (2006.01); H01L 21/768 (2006.01); H04R 1/40 (2006.01); H04R 19/00 (2006.01);
U.S. Cl.
CPC ...
H04R 1/04 (2013.01); B81B 7/02 (2013.01); B81C 1/00158 (2013.01); H01L 21/6835 (2013.01); H01L 21/6836 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 24/32 (2013.01); H04R 1/406 (2013.01); H04R 19/005 (2013.01); H04R 19/04 (2013.01); B81B 2201/0257 (2013.01); B81B 2207/096 (2013.01); B81C 2201/0132 (2013.01); B81C 2203/0109 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 24/83 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/131 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/27002 (2013.01); H01L 2224/27618 (2013.01); H01L 2224/27848 (2013.01); H01L 2224/29011 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/3201 (2013.01); H01L 2224/32058 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/83005 (2013.01); H01L 2224/8346 (2013.01); H01L 2224/8359 (2013.01); H01L 2224/83193 (2013.01); H01L 2224/83438 (2013.01); H01L 2224/83488 (2013.01); H01L 2224/83688 (2013.01); H01L 2224/83862 (2013.01); H01L 2224/92 (2013.01); H01L 2224/9222 (2013.01); H01L 2224/92225 (2013.01); H01L 2924/1461 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/161 (2013.01); H01L 2924/163 (2013.01); H01L 2924/166 (2013.01); H01L 2924/16151 (2013.01); H01L 2924/16152 (2013.01);
Abstract

Embodiments of the present disclosure describe a die with integrated microphone device using through-silicon vias (TSVs) and associated techniques and configurations. In one embodiment, an apparatus includes an apparatus comprising a semiconductor substrate having a first side and a second side disposed opposite to the first side, an interconnect layer formed on the first side of the semiconductor substrate, a through-silicon via (TSV) formed through the semiconductor substrate and configured to route electrical signals between the first side of the semiconductor substrate and the second side of the semiconductor substrate, and a microphone device formed on the second side of the semiconductor substrate and electrically coupled with the TSV. Other embodiments may be described and/or claimed.


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