The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2019

Filed:

Jun. 05, 2017
Applicant:

University of Utah Research Foundation, Salt Lake City, UT (US);

Inventors:

Carina Hahn, Salt Lake City, UT (US);

Dennis Pruzan, Salt Lake City, UT (US);

Michael Scarpulla, Salt Lake City, UT (US);

Assignee:

University of Utah Research Foundation, Salt Lake City, UT (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1836 (2013.01); H01L 31/1832 (2013.01); Y02E 10/50 (2013.01);
Abstract

A method of creating cadmium telluride films is presented. The method demonstrates heterogeneous nucleation of CdTe directly on a substrate through sequential deposition of aqueous precursor solutions containing cadmium and telluride ions, respectively. The method can include (i) applying a cadmium precursor solution to the substrate to form a cadmium precursor film on the substrate, (ii) applying a telluride precursor solution to the cadmium precursor film. The telluride precursor solution includes Tein solution such that a CdTe film is adherently formed directly on the substrate.


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