The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Mar. 12, 2018
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Vincent Mazzocchi, Grenoble, FR;
Laurent Grenouillet, Claix, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 29/36 (2006.01); H01L 29/04 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 21/02532 (2013.01); H01L 27/1203 (2013.01); H01L 29/04 (2013.01); H01L 29/0847 (2013.01); H01L 29/36 (2013.01); H01L 29/66628 (2013.01); H01L 29/66772 (2013.01); H01L 29/78 (2013.01); H01L 29/78618 (2013.01); H01L 29/78654 (2013.01);
Abstract
Field-effect transistor, the source and drain regions whereof are formed from a crystalline structure comprising:
Mazzocchi, Vincent. (2019). Transistor having structured source and drain regions and production method thereof (U.S. Patent No. 10453960). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10453960
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile