The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Oct. 27, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Sheng-Wen Chen, Tainan, TW;
Yu-Ting Lin, Tainan, TW;
Che-Hao Chang, Hsin-Chu, TW;
Wei-Ming You, Taipei, TW;
Ting-Chun Wang, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device having a high-k gate dielectric, and a method of manufacture, is provided. A gate dielectric layer is formed over a substrate. An interfacial layer may be interposed between the gate dielectric layer and the substrate. A barrier layer, such as a TiN layer, having a higher concentration of nitrogen along an interface between the barrier layer and the gate dielectric layer is formed. The barrier layer may be formed by depositing, for example, a TiN layer and performing a nitridation process on the TiN layer to increase the concentration of nitrogen along an interface between the barrier layer and the gate dielectric layer. A gate electrode is formed over the barrier layer.