The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2019

Filed:

May. 17, 2017
Applicant:

Mitsubishi Materials Corporation, Tokyo, JP;

Inventors:

Toyo Ohashi, Saitama, JP;

Yoshiyuki Nagatomo, Saitama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H05K 1/02 (2006.01); C04B 37/02 (2006.01); B23K 35/22 (2006.01); H05K 1/03 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49822 (2013.01); B23K 35/22 (2013.01); C04B 37/026 (2013.01); H05K 1/0298 (2013.01); H05K 1/0306 (2013.01);
Abstract

A power module substrate of the present invention includes a ceramic substrate and a circuit layer having a circuit pattern. In an interface between the circuit layer and the ceramic substrate, a Cu—Sn layer and a Ti-containing layer are laminated in this order from the ceramic substrate side. In a cross-sectional shape of an end portion of the circuit pattern of the circuit layer, an angle θ formed between a surface of the ceramic substrate and an end face of the Cu—Sn layer is set in a range equal to or greater than 80° and equal to or smaller than 100°, and a maximum protrusion length L of the Cu—Sn layer or the Ti-containing layer from an end face of the circuit layer is set in a range equal to or greater than 2μm and equal to or smaller than 15 μm.


Find Patent Forward Citations

Loading…