The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Feb. 13, 2018
Tokyo Electron Limited, Minato-ku, Tokyo, JP;
Kandabara N. Tapily, Mechanicville, NY (US);
Sangcheol Han, Clifton Park, NY (US);
Soo Doo Chae, Guilderland, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A substrate processing method for forming a self-aligned contact using selective SiOdeposition is described in various embodiments. The method includes providing a planarized substrate containing a dielectric layer surface and a metal-containing surface, coating the dielectric layer surface with a metal-containing catalyst layer, and exposing the planarized substrate to a process gas containing a silanol gas for a time period that selectively deposits a SiOlayer on the metal-containing catalyst layer on the dielectric layer surface. According to one embodiment, the method further includes depositing an etch stop layer on the SiOlayer and on the metal-containing surfaces, depositing an interlayer dielectric layer on the planarized substrate, etching a recessed feature in the interlayer dielectric layer and stopping on the etch stop layer above the metal-containing surface, and filling the recessed feature with a metal.