The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Aug. 27, 2015
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 23/52 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 23/522 (2006.01); H01L 27/11575 (2017.01); H01L 27/11582 (2017.01); H01L 27/11548 (2017.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/32133 (2013.01); H01L 21/32139 (2013.01); H01L 21/7685 (2013.01); H01L 21/76804 (2013.01); H01L 21/76829 (2013.01); H01L 21/76834 (2013.01); H01L 21/76865 (2013.01); H01L 23/5226 (2013.01); H01L 23/53295 (2013.01); H01L 27/11575 (2013.01); H01L 27/11582 (2013.01); H01L 21/76838 (2013.01); H01L 27/11548 (2013.01);
Abstract
A method of forming a semiconductor device assembly comprises forming tiers comprising conductive structures and insulating structures in a stacked arrangement over a substrate. Portions of the tiers are selectively removed to form a stair step structure comprising a selected number of steps exhibiting different widths corresponding to variances in projected error associated with forming the steps. Contact structures are formed on the steps of the stair step structure. Semiconductor device structures and semiconductor devices are also described.