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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10453707 B1

PDFFull Text
Date of Patent:
Oct. 22, 2019

Filed:

Oct. 24, 2017

Method for fabricating semiconductor device

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Yong Seok Cho, Seoul, KR;

Hyung Joon Kim, Yongin-si, KR;

Jung Ho Kim, Seongnam-si, KR;

Joong Yun Ra, Hwaseong-si, KR;

Bi O Kim, Seoul, KR;

Jae Young Ahn, Seongnam-si, KR;

Ki Yong Oh, Seoul, KR;

Sung Hae Lee, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:

Lee & Morse, P.C.

Primary Examiner:

Laura M Menz

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/56 (2006.01); H01L 21/8239 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 21/28 (2006.01); H01L 27/108 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 21/565 (2013.01); H01L 21/28088 (2013.01); H01L 21/28282 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 21/8239 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 21/823481 (2013.01); H01L 27/10876 (2013.01); H01L 27/11582 (2013.01);
Abstract

A method for fabricating a semiconductor device, the method including forming a mold structure on a substrate such that the mold structure includes alternately and repeatedly stacked interlayer insulating films and sacrificial films; forming a channel hole passing through the mold structure; forming a vertical channel structure within the channel hole; exposing a surface of the interlayer insulating films by removing the sacrificial films; forming an aluminum oxide film along a surface of the interlayer insulating films; forming a continuous film on the aluminum oxide film; and nitriding the continuous film to form a TiN film.

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