The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Oct. 05, 2017
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventor:
Michael Grimbergen, Redwood City, CA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01J 37/32 (2006.01); G03F 1/26 (2012.01); G03F 1/80 (2012.01); H01L 21/308 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); G03F 1/26 (2013.01); G03F 1/80 (2013.01); H01J 37/32963 (2013.01); H01L 21/3085 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01);
Abstract
The present invention provides a method and apparatus for etching a photomask substrate with enhanced process monitoring, for example, by providing for optical monitoring at certain regions of the photomask to obtain dual endpoints, e.g., etch rate or thickness loss of both a photoresist layer and an absorber layer. By monitoring transmissity of an optical beam transmitted through areas having photoresist layer and etched absorber layer at two different predetermined wavelength, dual process endpoints may be obtained by a signal optical detection.