The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Aug. 31, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Chiao Tung University, Hsinchu, TW;
Chao-Hsin Chien, Hsinchu, TW;
Chi-Wen Liu, Hsinchu, TW;
Chung-Chun Hsu, Hsinchu, TW;
Wei-Chun Chi, Hsinchu, TW;
National Chiao Tung University, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method of manufacturing a semiconductor device includes forming a first metal layer on a semiconductor substrate and forming a second metal layer on the first metal layer. The second metal layer is formed of a different metal than the first metal layer. Microwave radiation is applied to the semiconductor substrate, first metal layer, and second metal layer to form an alloy including components of the first metal layer, second metal layer, and the semiconductor substrate.