The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2019

Filed:

Nov. 30, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Prasenjit Ray, Hsinchu, TW;

Lee-Chung Lu, Taipei, TW;

Meng-Kai Hsu, Xinfeng Township, TW;

Wen-Hao Chen, Hsinchu, TW;

Yuan-Te Hou, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); H01L 27/02 (2006.01); H01L 23/52 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5077 (2013.01); G06F 17/5068 (2013.01); G06F 17/5081 (2013.01); H01L 23/52 (2013.01); H01L 23/5226 (2013.01); H01L 27/027 (2013.01);
Abstract

A method is applied to reconfigure a set of uncrowned standard cells in a layout of a semiconductor apparatus. Each uncrowned standard cell includes a standard first array. Each standard first array includes a first stacked arrangement of vias interspersed with first segments of corresponding M(i)˜M(N) metallization layers. The M(N) metallization layer includes second segments which connect corresponding first segments of the M(N) metallization layer in the first standard arrays. The method includes crowning each first standard array in the set with a corresponding second standard array, the latter including a second stacked arrangement of vias interspersed with corresponding first segments of corresponding M(N+1)˜M(N+Q) metallization layers. The crowning includes disposing vias in a VIA(N+1) layer so as to be substantially collinear (relative to a first direction), and not substantially collinear (relative to a substantially perpendicular second direction), with corresponding vias in the VIA(N) layer.


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