The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Sep. 18, 2018
Toshiba Memory Corporation, Minato-ku, JP;
Yoko Yoshimura, Yokkaichi, JP;
Hiromichi Kuriyama, Kuwana, JP;
Shoichi Kabuyanagi, Yokkaichi, JP;
Yuuichi Kamimuta, Yokkaichi, JP;
Chika Tanaka, Fujisawa, JP;
Masumi Saitoh, Yokohama, JP;
Toshiba Memory Corporation, Minato-ku, JP;
Abstract
A memory device according to an embodiment includes a first conductive layer extending in a first direction, a second conductive layer extending in the first direction, a third conductive layer extending in a second direction intersecting the first direction, an insulating layer containing aluminum oxide provided between the first conductive layer and the second conductive layer, and a first insulating film including a first region located between the first conductive layer and the third conductive layer and a second region located between the insulating layer and the third conductive layer. The first region includes hafnium oxide mainly formed as an orthorhombic. The second region includes hafnium oxide mainly formed as crystals other than the orthorhombic.