Double-patterned magneto-resistive random access memory (mram) for reducing magnetic tunnel junction (mtj) pitch for increased mram bit cell density

Abstract

Double-patterned magneto-resistive random access memory (MRAM) for reducing magnetic tunnel junction (MTJ) pitch for increased MRAM bit cell density is disclosed. In one aspect, to fabricate MTJs in an MRAM array with reduced MTJ row pitch, a first patterning process is performed to provide separation areas in an MTJ layer between what will become rows of fabricated MTJs, which facilitates MTJs in a given row sharing a common bottom electrode. This reduces the etch depth and etching time needed to etch the individual MTJs in a subsequent step, can reduce lateral projections of sidewalls of the MTJs, thereby relaxing the pitch between adjacent MTJs, and may allow an initial MTJ hard mask layer to be reduced in height. A subsequent second patterning process is performed to fabricate individual MTJs. Additional separation areas are etched between free layers of adjacent MTJs in a given row to fabricate the individual MTJs.