The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
May. 11, 2018
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Universite D'aix-marseille, Marseilles, FR;
Jean-Michel Portal, Saint-Savournin, FR;
Marios Barlas, Grenoble, FR;
Laurent Grenouillet, Claix, FR;
Elisa Vianello, Grenoble, FR;
Commissariat a l'energie atomique et aux energies alternatives, Paris, FR;
Universite d'Aix-Marseille, Marseilles, FR;
Abstract
The invention relates to a non-volatile memory that comprises selection transistors. Each selection transistor includes a layer of semiconductor material with a channel region and conduction electrodes, a gate stack including a gate electrode and a gate insulator, an isolation trench between the transistors, a storage structure of the RRAM type comprising a control electrode, and a dielectric layer formed under the control electrode and in the same material as the gate insulator, comprising a central part directly above the isolation trench and ends extending directly above conduction electrodes, and configured so as to form conducting filaments. The said storage structure and the said selection transistors are formed in the same pre-metallization layer.