The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Mar. 01, 2018
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yoonhee Kang, Changwon-si, KR;
Jiyoung Kim, Seoul, KR;
Taejin Yim, Yongin-si, KR;
Jongmin Baek, Seoul, KR;
Sanghoon Ahn, Goyang-si, KR;
Hyeoksang Oh, Suwon-si, KR;
Kyu-Hee Han, Hwaseong-si, KR;
Abstract
Embodiments of the present inventive concepts provide methods of forming an ultra-low-k dielectric layer and the ultra-low-k dielectric layer formed thereby. The method may include forming a first layer by supplying a precursor including silicon, oxygen, carbon, and hydrogen, performing a first ultraviolet process on the first layer to convert the first layer into a second layer, and performing a second ultraviolet process on the second layer under a process condition different from that of the first ultraviolet process.