The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Jul. 16, 2018
United Microelectronics Corp., Hsin-Chu, TW;
Yi-Fan Li, Tainan, TW;
I-Cheng Hu, Kaohsiung, TW;
Chun-Jen Chen, Tainan, TW;
Tien-I Wu, Taoyuan, TW;
Yu-Shu Lin, Pingtung County, TW;
Chun-Yuan Wu, Yun-Lin County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a shallow trench isolation (STI) around the fin-shaped structure; forming a liner on the fin-shaped structure; and removing the liner and part of the fin-shaped structure so that a sidewall of the fin-shaped structure comprises a curve. Moreover, the method includes forming an epitaxial layer around the sidewall of the fin-shaped structure while a top surface of the fin-shaped structure is exposed.