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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10446437 B1

PDFFull Text
Date of Patent:
Oct. 15, 2019

Filed:

Oct. 10, 2016

Interlevel connectors in multilevel circuitry, and method for forming the same

Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventor:

Chin-Cheng Yang, Kaohsiung, TW;

Assignee:

MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;

Attorney:

Haynes Beffel & Wolfeld LLP

Primary Examiner:

Cuong B Nguyen

Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 21/768 (2006.01); G11C 16/08 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/11524 (2017.01); H01L 27/11529 (2017.01); H01L 27/11556 (2017.01); H01L 27/1157 (2017.01); H01L 27/11573 (2017.01); H01L 27/11582 (2017.01); H01L 27/11548 (2017.01); H01L 27/11575 (2017.01); H01L 27/11526 (2017.01);
U.S. Cl.
CPC ...
H01L 21/76816 (2013.01); G11C 16/08 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11529 (2013.01); H01L 27/11548 (2013.01); H01L 27/11556 (2013.01); H01L 27/11573 (2013.01); H01L 27/11575 (2013.01); H01L 27/11582 (2013.01); H01L 27/11526 (2013.01);
Abstract

Multilevel circuitry such as a a 3D memory array, has a set of contact regions arranged around a perimeter of a multilevel region, in which connection is made to circuit elements in a number W levels. Each of the contact regions has a number of steps having landing areas thereon, including steps on up to a number M levels, where the number M can be much less than W. A combination of contact regions provides landing areas on all of the W levels, each of the contact regions in the combination having landing areas on different subsets of the W levels. A method of forming the device uses an etch-trim process to form M levels in all of the contact regions, and one or more anisotropic etches in some of the contact regions.

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