The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Sep. 12, 2018
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventor:
Hideki Makiyama, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 27/1157 (2017.01); H01L 21/324 (2006.01); H01L 29/792 (2006.01); H01L 29/423 (2006.01); H01L 27/11573 (2017.01);
U.S. Cl.
CPC ...
H01L 21/28202 (2013.01); H01L 21/324 (2013.01); H01L 27/1157 (2013.01); H01L 27/11573 (2013.01); H01L 29/4234 (2013.01); H01L 29/42344 (2013.01); H01L 29/792 (2013.01); H01L 21/28238 (2013.01);
Abstract
Reliability of a semiconductor device is improved. In a method of manufacturing a semiconductor device, nitrogen is introduced into a surface of a substrate and a sacrificial film is formed on the surface in a field effect transistor formation region different from a memory transistor formation region. Subsequently, the sacrificial film is removed to remove the nitrogen introduced in the surface of the substrate in the field effect transistor formation region.