The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Feb. 10, 2017
Ciena Corporation, Hanover, MD (US);
Francois Pelletier, Quebec, CA;
Ciena Corporation, Hanover, MD (US);
Abstract
An integrated silicon-based photo-detection system, fabricated in an integrated silicon based structure on a silicon-on-insulator (SOI) wafer, includes a photodiode fabricated on an isolated area surrounded by a light barrier, where the light barrier is an area where the SOI wafer is removed, an optical waveguide that guides an input signal light into the photodiode, and external electrical traces that the free electron carriers flow into as photocurrent. A method of fabricating an integrated silicon-based photo-detection system in an integrated silicon based structure on a silicon-on-insulator (SOI) wafer, includes performing deep etching to create a light barrier surrounding an isolated area on the SOI wafer, fabricating a photodiode in the isolated area surrounded by the light barrier, fabricating an optical waveguide that guides an input signal light into the photodiode, and wirebonding external electrical traces to connect to the remainder of the integrated silicon based structure.