The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Aug. 31, 2017
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Qing Cao, Yorktown Heights, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Zhengwen Li, Chicago, IL (US);
Fei Liu, Yorktown Heights, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01); H01L 21/00 (2006.01); H01L 49/02 (2006.01); H01L 21/02 (2006.01); H01L 21/78 (2006.01); A61K 9/14 (2006.01); B82Y 5/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 49/02 (2013.01); A61K 9/143 (2013.01); B82Y 5/00 (2013.01); B82Y 40/00 (2013.01); H01L 21/0217 (2013.01); H01L 21/02422 (2013.01); H01L 21/02532 (2013.01); H01L 21/02601 (2013.01); H01L 21/7806 (2013.01);
Abstract
A method of forming a nanoparticle includes forming a layer of semiconductor material on a substrate, forming a first layer on the semiconductor material, and etching the semiconductor layer to form the nanoparticle including the first layer on a first side of the nanoparticle and the semiconductor material on a second side of the nanoparticle.