The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Jul. 13, 2018
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Shunpei Yamazaki, Tokyo, JP;
Kenichi Okazaki, Tochigi, JP;
Masashi Tsubuku, Saitama, JP;
Satoru Saito, Tochigi, JP;
Noritaka Ishihara, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
A semiconductor device with improved electrical characteristics is provided. A semiconductor device with improved field effect mobility is provided. A semiconductor device in which the field-effect mobility is not lowered even at high temperatures is provided. A semiconductor device which can be formed at low temperatures is provided. A semiconductor device with improved productivity can be provided. In the semiconductor device, there is a range of a gate voltage where the field-effect mobility increases as the temperature increases within a range of the gate voltage from 0 V to 10 V. For example, such a range of a gate voltage exists at temperatures ranging from a room temperature (25° C.) to 120° C. In the semiconductor device, the off-state current is kept extremely low (lower than or equal to the detection limit of a measurement device) within the above temperature range.