The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2019

Filed:

Sep. 29, 2017
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Ling-Chun Chou, Tainan, TW;

Kun-Hsien Lee, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 29/165 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 21/823456 (2013.01); H01L 27/0605 (2013.01); H01L 27/088 (2013.01); H01L 29/165 (2013.01); H01L 29/66636 (2013.01); H01L 21/823481 (2013.01);
Abstract

A semiconductor structure is provided. The semiconductor structure includes a substrate, a plurality of first gate structures, a plurality of second gate structures, a first strained region, and a second strained region. The substrate has a first region and a second region. The first gate structures are disposed in the first region on the substrate. The second gate structures are disposed in the second region on the substrate. The first strained region is formed in the substrate and has a first distance from an adjacent first gate structure. The second strained region is formed in the substrate and has a second distance from an adjacent second gate structure, wherein the second distance is greater than the first distance.


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