The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Dec. 01, 2017
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Jing Lin, Shanghai, CN;
Abstract
A semiconductor device and a fabrication method are provided. The method includes providing a substrate; forming a gate structure film on the substrate; forming a patterned mask structure on the gate structure film, where the patterned mask structure includes a first mask layer at least including a first material layer and a second mask layer on the first mask layer; forming a gate structure on the substrate by etching the gate structure film using the patterned mask structure as an etch mask, where the first material layer has an etching rate smaller than the second mask layer; and forming a spacer at least on a sidewall of the gate structure.