The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2019

Filed:

Apr. 16, 2018
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Jinchang Zhou, Scottsdale, AZ (US);

Yusheng Lin, Phoenix, AZ (US);

Mingjiao Liu, Gilbert, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/07 (2006.01); H01L 29/739 (2006.01); H01L 25/00 (2006.01); H01L 23/538 (2006.01); H01L 25/11 (2006.01); H01L 25/065 (2006.01); H01L 41/083 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/071 (2013.01); H01L 23/5384 (2013.01); H01L 23/5389 (2013.01); H01L 24/09 (2013.01); H01L 25/0652 (2013.01); H01L 25/0655 (2013.01); H01L 25/0657 (2013.01); H01L 25/072 (2013.01); H01L 25/074 (2013.01); H01L 25/117 (2013.01); H01L 25/50 (2013.01); H01L 29/7395 (2013.01); H01L 41/083 (2013.01); H01L 23/5385 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05085 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/1403 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/8384 (2013.01); H01L 2224/83815 (2013.01); H01L 2224/92242 (2013.01); H01L 2225/06503 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06527 (2013.01); H01L 2225/06572 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/19105 (2013.01);
Abstract

A semiconductor device has an interposer including a plurality of conductive vias formed through the interposer. A first semiconductor die is disposed over the interposer. A second semiconductor die is disposed over a first substrate. The first semiconductor die and second semiconductor die are power semiconductor devices. The interposer is disposed over the second semiconductor die opposite the first substrate. A second substrate is disposed over the first semiconductor die opposite the interposer. The first substrate and second substrate provide heat dissipation from the first semiconductor die and second semiconductor die from opposite sides of the semiconductor device. A plurality of first and second interconnect pads is formed in a pattern over the first semiconductor die and second semiconductor die. The second interconnect pads have a different area than the first interconnect pads to aid with alignment when stacking the assembly.


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