The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
May. 10, 2018
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Erdem Kaltalioglu, Newburgh, NY (US);
Atsushi Ogino, Fishkill, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 21/48 (2006.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 23/52 (2006.01); H01L 23/522 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 21/283 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/28 (2013.01); H01L 21/283 (2013.01); H01L 21/486 (2013.01); H01L 21/4846 (2013.01); H01L 21/76802 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 21/76897 (2013.01); H01L 21/823475 (2013.01); H01L 21/823871 (2013.01); H01L 23/48 (2013.01); H01L 23/481 (2013.01); H01L 23/498 (2013.01); H01L 23/49827 (2013.01); H01L 23/49838 (2013.01); H01L 23/49894 (2013.01); H01L 23/52 (2013.01); H01L 23/5226 (2013.01); H01L 23/5286 (2013.01);
Abstract
Disclosed herein is an integrated circuit (IC) including a first metal layer running in a first direction, a second metal layer running in a second direction perpendicular to the first direction, the second metal layer above the first metal layer and a third metal layer running in the first direction above the second metal layer. A viabar electrically connects the first metal layer to the third metal layer, the viabar running in the first direction wherein the viabar vertically extends from the first metal layer to the third metal layer. A method of manufacturing the IC is provided.