The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Nov. 30, 2017
International Business Machines Corporation, Armonk, NY (US);
Stephen W. Bedell, Wappingers Falls, NY (US);
Joel P. de Souza, Putnam Valley, NY (US);
Alexander Reznicek, Troy, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Dominic J. Schepis, Wappingers Falls, NY (US);
Internationa Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming an SOI fin using a porous semiconductor. The method may include forming a stack of semiconductor layers on a substrate, the stack includes a second semiconductor layer on a first semiconductor layer in a layered region; forming fins in the second semiconductor layer by etching a trench through an exposed portion of the of the second semiconductor layer; converting the first semiconductor layer into a porous semiconductor layer using a porousification process; and converting the porous semiconductor layer into an oxide layer.