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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10438855 B1

PDFFull Text
Date of Patent:
Oct. 08, 2019

Filed:

Feb. 17, 2017

Dual channel finfets having uniform fin heights

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Zhenxing Bi, Niskayuna, NY (US);

Kangguo Cheng, Schenectady, NY (US);

Peng Xu, Guilderland, NY (US);

Jie Yang, Clifton Park, NY (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

Cantor Colburn LLP

Vazken Alexanian

Primary Examiner:

Jamie C Niesz

Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 21/308 (2006.01); H01L 29/36 (2006.01); H01L 21/228 (2006.01); H01L 21/265 (2006.01); H01L 21/223 (2006.01); H01L 21/22 (2006.01); H01L 21/02 (2006.01); H01L 21/225 (2006.01); H01L 21/20 (2006.01); H01L 21/306 (2006.01); H01L 21/8254 (2006.01); H01L 21/8256 (2006.01); H01L 21/82 (2006.01); H01L 21/8252 (2006.01); H01L 29/161 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823821 (2013.01); H01L 21/3085 (2013.01); H01L 21/76224 (2013.01); H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 21/823807 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/36 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7854 (2013.01); H01L 21/02532 (2013.01); H01L 21/20 (2013.01); H01L 21/2205 (2013.01); H01L 21/228 (2013.01); H01L 21/2236 (2013.01); H01L 21/2251 (2013.01); H01L 21/2652 (2013.01); H01L 21/308 (2013.01); H01L 21/30608 (2013.01); H01L 21/8213 (2013.01); H01L 21/8252 (2013.01); H01L 21/8254 (2013.01); H01L 21/8256 (2013.01); H01L 29/161 (2013.01);
Abstract

A method of making a semiconductor device including forming a first blanket layer on a substrate; forming a second blanket layer on the first blanket layer; patterning a first fin of a first transistor region and a second fin of a second transistor region in the first blanket layer and the second blanket layer; depositing a mask on the second transistor region; removing the first fin to form a trench; growing a first semiconductor layer in the trench where the first fin was removed; and growing a second semiconductor layer on the first semiconductor layer.

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