The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Aug. 22, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Cha-Won Koh, Yongin-si, KR;
Cheol-Hong Park, Seoul, KR;
Hyun-Woo Kim, Seongnam-si, KR;
Jin-Kyu Han, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Example embodiments relate to a method of forming a photoresist pattern and a method of fabricating a semiconductor device using the same. The method of fabricating a semiconductor device comprises forming a mask layer on a substrate, forming a photoresist pattern on the mask layer, the photoresist pattern having pattern portions at a first height and recess portions, applying a first liquid onto the photoresist pattern, filling the recess portions with a pattern filler at a second height, the pattern filler having an higher etch rate than the etch rate of the pattern portions to the same etchant, removing the first liquid, etching the pattern filler after removing the first liquid, etching the mask layer via the photoresist pattern to form a mask pattern, and etching the substrate via the mask pattern to form a fine pattern.