The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Oct. 30, 2015
Applicant:
Fujifilm Corporation, Tokyo, JP;
Inventors:
Naotsugu Muro, Shizuoka, JP;
Tetsuya Kamimura, Shizuoka, JP;
Satomi Takahashi, Shizuoka, JP;
Akiko Koyama, Shizuoka, JP;
Atsushi Mizutani, Shizuoka, JP;
Assignee:
FUJIFILM Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/30 (2006.01); H01L 21/3213 (2006.01); C23F 1/28 (2006.01); C23F 1/26 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
C23F 1/30 (2013.01); C23F 1/26 (2013.01); C23F 1/28 (2013.01); H01L 21/32134 (2013.01); H01L 29/41725 (2013.01); H01L 29/665 (2013.01); H01L 29/7833 (2013.01);
Abstract
There is provided an etching method of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing at least one specific metal element selected from nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), the method including: bringing an etching solution which contains a non-halogen acidic compound into contact with the second layer and selectively removing the second layer.