The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
Mar. 16, 2018
United Microelectronics Corp., Hsinchu, TW;
Yen-Ming Chen, New Taipei, TW;
Chiu-Ling Lee, Hsinchu, TW;
Min-Hsuan Tsai, Tainan, TW;
Chiu-Te Lee, Hsinchu County, TW;
Chih-Chung Wang, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A transistor structure including a substrate, a transistor device, a split buried layer, and a second buried layer is provided. The substrate has a device region. The transistor device is located in the device region. The split buried layer is located under the transistor device in the substrate and includes first buried layers separated from each other. The second buried layer is located under the split buried layer in the substrate and connects the first buried layers. The second buried layer and the split buried layer have a first conductive type. The transistor structure may have a higher breakdown voltage.