The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
Jan. 02, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jang-Gn Yun, Hwaseong-si, KR;
Sung-Min Hwang, Hwaseong-si, KR;
Joon-Sung Lim, Yongin-si, KR;
Kyoil Koo, Hwaseong-si, KR;
Hoosung Cho, Yongin-si, KR;
Sunyoung Kim, Seongnam-si, KR;
Cheol Ryou, Hwaseong-si, KR;
Jaesun Yun, Anyang-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Disclosed is a three-dimensional semiconductor memory device that includes first to third channel groups arranged in a first direction on a substrate. The first to third channel groups are spaced apart from each other along a second direction on the substrate. Each of the first to third channel groups includes a plurality of vertical channels that extend in a third direction perpendicular to a top surface of the substrate. The first and second channel groups are adjacent to each other in the second direction and spaced apart at a first distance in the second direction. The second and third channel groups are adjacent to each other in the second direction and are spaced apart at a second distance that is less than the first distance.