The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
Dec. 20, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Dusik Bae, Changwon-si, KR;
Yoonmi Lee, Seoul, KR;
Hyeogki Kim, Hwaseong-si, KR;
Kyoungsil Park, Seongnam-si, KR;
JungDae Park, Yongin-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/311 (2006.01); G01N 21/65 (2006.01); H01L 21/67 (2006.01); H01L 21/033 (2006.01); G01N 21/956 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); G01N 21/65 (2013.01); H01L 21/0334 (2013.01); H01L 21/31116 (2013.01); H01L 21/67069 (2013.01); H01L 22/20 (2013.01); H01L 22/24 (2013.01); H01L 22/26 (2013.01); G01N 2021/95676 (2013.01);
Abstract
Disclosed are a method of processing a substrate and a method of fabricating a semiconductor device using the same. The method of processing a substrate comprises forming a mask layer on a substrate, inspecting the mask layer, and forming a mask pattern based on an inspection result of the mask layer. The operation of inspecting the mask layer comprises using Raman spectrum analysis to detect defects in the mask layer.