The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
May. 30, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Li-Wen Wang, Taichung, TW;
Chih-Yu Lin, Taichung, TW;
Yen-Huei Chen, Jhudong Township, TW;
Hung-Jen Liao, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 11/417 (2006.01); G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
G11C 11/417 (2013.01); G11C 11/419 (2013.01);
Abstract
A static random access memory (SRAM) that includes a memory cell comprising at least two p-type pass gates. The SRAM also includes a first data line connected to the memory cell, a second data line connected to the memory cell and a voltage control unit connected to the first data line, wherein the voltage control unit is configured to control the memory cell.