The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
Mar. 01, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Boyoung Seo, Suwon-si, KR;
Yongkyu Lee, Gwacheon-si, KR;
Gwanhyeob Koh, Seoul, KR;
Choong Jae Lee, Hwaseong-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 17/02 (2006.01); G11C 11/16 (2006.01); H01L 43/10 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 17/02 (2013.01); H01L 27/228 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract
A semiconductor device includes a memory cell array, which further includes an array of first magnetic memory cells and an array of second magnetic memory cells. Each of the first magnetic memory cells includes a first magnetic tunnel junction structure having a reversible resistance state, and each of the second magnetic memory cells includes a second magnetic tunnel junction structure having a one-time programmable (OTP) resistance state.