The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
Dec. 29, 2017
Micron Technology, Inc., Boise, ID (US);
Davide Mantegazza, Palo Alto, CA (US);
Kiran Pangal, Fremont, CA (US);
Feng Q. Pan, Boise, ID (US);
Hernan A. Castro, Shingle Springs, CA (US);
DerChang Kau, Cupertino, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Apparatuses for increasing the voltage budget window of a memory array are described. One or more pre-bias voltages may be applied across a selected cell by providing voltages to memory access lines coupled to the selected cell. The threshold voltage of the selected cell may decrease responsive to the pre-bias voltage. Conversely, threshold voltage of deselected cells coupled to only one of the memory access lines coupled to the selected cell may increase responsive to the pre-bias voltage. The decrease of the threshold voltage of the selected cell and the increase of the threshold voltage of the deselected cells may increase the voltage window of the memory array.